Electron charge sensor with hole current operating at cryogenic temperature

Abstract When silicon-on-insulator p-type MOSFET (SOI-PMOS) functions like a capacitor-less 1T-DRAM cell, it is possible for the number of electrons to be sensed at cryogenic temperatures (5 K). We developed structure that combines n-type MOSFETs (SOI-NMOS) and SOI-PMOS with multiple gates form silicon quantum-dot array. In this structure, variable injected into body by means bucket-brigade operation SOI-NMOS connected in series. The channel-hole current was changed due bias effect SOI-PMOS, change appeared step-like, which suggests dependence on elementary charge.